1200C Small PECVD System tiny Tube Furnace 3Channel Mass Gas Control ,high vacuu

1. Plasma Enhanced CVD Furnace System introduction The product has a solid-state plasma sources, the divided reaction gas intake system, dynamic substrate temperature control, full control of the vacuum system, with centralized control technology nobody control software, and user-friendly interface to operate. Applicable for SiO2, SiNx ,, SiONx a-Si thin film deposition at room temperature to 1200 ℃ condition , at the same time the products can achieve TEOS source deposition, SiC film deposition, and other deposition liquid or gaseous source materials, especially for high efficiency protective layer film deposition of organic materials and no damage passivation film deposition under a specific temperature. 2. Plasma Enhanced CVD Tube Furnace System 1200 Celsius applications: Plasma induced surface modification Plasma cleaning Plasma polymerization A variety of films deposited on the surface of SiOx, SiNx, amorphous silicon, microcrystalline silicon, nano-silicon, SiC, DLC, etc. selective growth of the carbon nanotubes (CNT) 3. Plasma Enhanced CVD Tube Furnace System 1200 Celsius Features: Main Feature Cleaning coating one go, to prevent secondary pollution; Open structure, easy observation; Touch-screen interactive, safe and reliable; Products adopts automatic control mode, touch screen, digital display. Vacuum systems, working pressure, power systems and automatic matching, gas flow, heating systems, motion systems, system monitoring and data acquisition